TK23H256 256K High Temperature ROM

Preliminary

General Description

The TK23H256 is a high temperature, masked ROM. Manufactured on an SOI process, it is designed to operate at temperatures of up to 300ºC.

The data is permanently stored within the ROM. The Tekmos TK23H256 does not have any of the data retention issues associated with flash memories.

The TK23H256 ROM may be programmed to be either 8, 16, or 32 bits wide. It may also be programmed to support a multiplexed address / data bus.

The ROM contains built-in ECC circuitry. This circuitry will correct single bit errors, and detect two bit errors. If a bit failure occurs, the TK23H256 will generate an interrupt, allowing the address and defective data to be identified by the processor.

The parts are manufactured in Ceramic packages. These are available in either through-hole or surface mount options. The part is also available in die form.

The TK23H256 ROM has a Minimum Order Quantity (MOQ) of 500 Units.

Up to 4 different ROM codes can be combined in a single order.

Features

262,144 bit ROM
Up to 300ºC Operation
-100 ns Access Time (5V)
Fully Non-Volatile
2.7V to 5.5V operation
High Temperature SOI Process
High Reliability Features
- Internal ECC
- Tungsten Metallization
- Double Bonds
- Interrupts on ECC failure
- Aluminum bonding standard
- Gold pad / gold bonds available
Available in Die Form for Hybrid Use
Optional support for Multiplexed Address / Data
Available in Multiple Widths
- 32Kx8, 16Kx16, 8Kx32
Interrupt on ECC Failure
JTAG Boundary Scan
Multiple Package Options