High Temperature ASICs, 250ºC and 200ºC
High Temperature Limits
Most ASICs are sold at an industrial temperature grade of 85ºC. Performance to the military limits of 125ºC is also available. But what about higher temperatures?
The ability to operate at higher temperatures is limited by design issues, packaging issues, reliability issues, and basic silicon properties. The standard XA35 technology can be extended up to 200ºC. The Tekmos SOI technology, with Tungsten interconnects can be extended all the way to 250ºC.
Diode Leakage
Silicon transistors contain parasitic reverse-biased diodes on all junctions. The diode leakage current increases with temperature, and eventually reaches a point where it prevents correct circuit operation. Diode leakage is the main factor in limiting our XA35 process technology from operating any higher than ~225ºC. The diode leakage currents also aggravate the metal migration reliability problem.
The Tekmos SOI process is based on an SOI (Silicon-On-Insulator) technology. In an SOI process, diode junctions are eliminated, except for the extremely small vertical interface between the diffusion and the transistor channel. In a typical case, the area of the diode junction is reduced by a factor of 15. And that allows us to achieve 250ºC operation.
SOI ASIC Features
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Bulk Silicon Features
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All Tekmos ASICs
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Mixed Signal
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Request for Product Information
To request information on our High Temperature ASICs, 250ºC and 200ºC click this button:
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Main Office
Tekmos, Inc.
14121 Highway 290 West
Building #15
Austin, TX 78737
Phone: (512) 342-9871
